Quantum-well-base heterojunction bipolar light-emitting transistor
Identifieur interne : 00A687 ( Main/Repository ); précédent : 00A686; suivant : 00A688Quantum-well-base heterojunction bipolar light-emitting transistor
Auteurs : RBID : Pascal:04-0132760Descripteurs français
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- 8535B, 8560J, 8530P, 7350G, 7363H, 8115H, Etude expérimentale, Indium composé, Gallium arséniure, Gallium composé, Semiconducteur III-V, Puits quantique semiconducteur, Transistor bipolaire hétérojonction, Dispositif émission lumière, Dispositif puits quantique, Epitaxie jet moléculaire, Piège électron, Recombinaison électron trou.
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Abstract
This letter reports the enhanced radiative recombination realized by incorporating InGaAs quantum wells in the base layer of light-emitting InGaP/GaAs heterojunction bipolar transistors (LETs) operating in the common-emitter configuration. Two 50 Å In1-xGaxAs (x=85%) quantum wells (QWs) acting, in effect, as electron capture centers ( traps ) are imbedded in the 300 Å GaAs base layer, thus improving (as a collector and recombination center) the light emission intensity compared to a similar LET structure without QWs in the base. Gigahertz operation of the QW LET with simultaneously amplified electrical output and an optical output with signal modulation is demonstrated. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Quantum-well-base heterojunction bipolar light-emitting transistor</title><author><name sortKey="Feng, M" uniqKey="Feng M">M. Feng</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Holonyak, N" uniqKey="Holonyak N">N. Holonyak</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Chan, R" uniqKey="Chan R">R. Chan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0132760</idno><date when="2004-03-15">2004-03-15</date><idno type="stanalyst">PASCAL 04-0132760 AIP</idno><idno type="RBID">Pascal:04-0132760</idno><idno type="wicri:Area/Main/Corpus">00BD06</idno><idno type="wicri:Area/Main/Repository">00A687</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron traps</term><term>Electron-hole recombination</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>Heterojunction bipolar transistors</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Light emitting devices</term><term>Molecular beam epitaxy</term><term>Quantum well devices</term><term>Semiconductor quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8535B</term><term>8560J</term><term>8530P</term><term>7350G</term><term>7363H</term><term>8115H</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Transistor bipolaire hétérojonction</term><term>Dispositif émission lumière</term><term>Dispositif puits quantique</term><term>Epitaxie jet moléculaire</term><term>Piège électron</term><term>Recombinaison électron trou</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This letter reports the enhanced radiative recombination realized by incorporating InGaAs quantum wells in the base layer of light-emitting InGaP/GaAs heterojunction bipolar transistors (LETs) operating in the common-emitter configuration. Two 50 Å In<sub>1-x</sub>Ga<sub>x</sub>As (x=85%) quantum wells (QWs) acting, in effect, as electron capture centers ( traps ) are imbedded in the 300 Å GaAs base layer, thus improving (as a collector and recombination center) the light emission intensity compared to a similar LET structure without QWs in the base. Gigahertz operation of the QW LET with simultaneously amplified electrical output and an optical output with signal modulation is demonstrated. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Quantum-well-base heterojunction bipolar light-emitting transistor</s1></fA08><fA11 i1="01" i2="1"><s1>FENG (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>HOLONYAK (N.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHAN (R.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>1952-1954</s1></fA20><fA21><s1>2004-03-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. 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